NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW
Features
Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices
V(BR)DSS Value 100 $20 19 13 PD IDM TJ, Tstg IS EAS 71 70 −55 to +175 19 50 W A °C A mJ 1 2 TL 260 °C 3 G Unit V V A 100 V
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
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