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RJH60D2DPE

Renesas Technology
Part Number RJH60D2DPE
Manufacturer Renesas Technology
Description Silicon N Channel IGBT
Published Feb 18, 2010
Detailed Description RJH60D2DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in di...
Datasheet PDF File RJH60D2DPE PDF File

RJH60D2DPE
RJH60D2DPE

Overview
RJH60D2DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode com Preliminary REJ03G1842-0100 Rev.
1.
00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1.
Gate 2.
Collector 3.
Emitter 4.
Collecotor Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage tempera...


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