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TPCP8H02

Toshiba Semiconductor
Part Number TPCP8H02
Manufacturer Toshiba Semiconductor
Description Multi-chip Transistor
Published Feb 20, 2010
Detailed Description TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TP...
Datasheet PDF File TPCP8H02 PDF File

TPCP8H02
TPCP8H02

Overview
TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 0.
33±0.
05 0.
05 M A 8 5 2.
4±0.
1 2.
8±0.
1 ・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive ・High DC current gain: hFE = 250 to 400 (IC = 0.
3 A) (NPN transistor) ・Low collector-emitter saturation voltage: VCE (sat) = 0.
14 V (max) (NPN transistor) ・High-speed switching: tf = 25 ns (typ.
) (NPN transistor) Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Col...


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