DARLINGTON TRANSISTOR. BU808DFX Datasheet

BU808DFX Datasheet PDF, Equivalent


Part Number

BU808DFX

Description

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

Manufacture

STMicroelectronics

Total Page 7 Pages
PDF Download
Download BU808DFX Datasheet PDF


BU808DFX Datasheet
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BU808DFX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
s HIGH VOLTAGE CAPABILITY (> 1400 V)
s HIGH DC CURRENT GAIN (TYP. 150)
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s LOW BASE-DRIVE REQUIREMENTS
s DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
s COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFX is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
3
2
1
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
April 2007
Value
1400
700
5
8
10
3
6
62
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
oC
oC
1/7

BU808DFX Datasheet
BU808DFX
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.02
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
ts
tf
Collector Cut-off
Current (VBE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
VCE = 1400 V
VEB = 5 V
IC = 5 A
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IB = 0.5 A
IC = 5 A
IB = 0.5 A
IC = 5 A
IC = 5 A
VCE = 5 V
VCE = 5 V Tj = 100 oC
VCC = 150 V
IB1 = 0.5 A
IC = 5 A
VBE(off) = -5 V
60
20
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
VCC = 150 V
IB1 = 0.5 A
Tj = 100 oC
VF Diode Forward Voltage IF = 5 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 5 A
VBE(off) = -5 V
Typ.
2.3
0.2
2
0.8
Max.
400
100
1.6
2.1
230
3
Unit
µA
mA
V
V
µs
µs
µs
µs
V
Safe Operating Area
Thermal Impedance
2/7


Features Datasheet pdf www.DataSheet4U.com BU808DFX HIGH VOLTA GE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR s s s s s s s STMicroele ctronics PREFERRED SALESTYPE NPN MONOLI THIC DARLINGTON WITH INTEGRATED FREE-WH EELING DIODE HIGH VOLTAGE CAPABILITY (> 1400 V) HIGH DC CURRENT GAIN (TYP. 150 ) FULLY INSULATED PACKAGE (U.L. COMPLIA NT) FOR EASY MOUNTING LOW BASE-DRIVE RE QUIREMENTS DEDICATED APPLICATION NOTE A N1184 1 3 2 s APPLICATIONS COST EFFE CTIVE SOLUTION FOR HORIZONTAL DEFLECTIO N IN LOW END TV UP TO 21 INCHES. DESCRI PTION The BU808DFX is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxia l Mesa technology for cost-effective hi gh performance. ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RA TINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj April 200 7 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Colle ctor Current Collector Peak Current (t p < 5 ms) Base Current B.
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