LET9150
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package
Description
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for...
