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GATE TRIACS. T0605DH Datasheet

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GATE TRIACS. T0605DH Datasheet
















T0605DH TRIACS. Datasheet pdf. Equivalent













Part

T0605DH

Description

(T0605xH / T0609xH) SENSITIVE GATE TRIACS



Feature


www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS ) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T0 6xxxH series of triacs uses a high perf ormance MESA GLASS technology. These pa rts are intended for general purpose ap plications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS).
Manufacture

STMicroelectronics

Datasheet
Download T0605DH Datasheet


STMicroelectronics T0605DH

T0605DH; ITSM Parameter RMS on-state current (36 0° conduction angle) Non repetitive su rge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /d t = 0.1 A/µs. IG = 50 mA Tc= 100 °C t p = 8.3 ms tp = 10 ms tp = 10 ms Repeti tive F = 50 Hz Non Repetitive Tstg Tj T l Storage and operating junction temper ature range Maximum le.


STMicroelectronics T0605DH

ad temperature for soldering during 10s at 4.5mm from case Value 6 63 60 18 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs Unit A A TO220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive pe ak off-state voltage Tj = 125°C 400 V oltage M 600 S 700 N 800 Unit V 1/5 www.DataSheet4U.com T0605xH / T0609xH THERMAL RESISTANCES Sy.


STMicroelectronics T0605DH

mbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.C Ju nction to case for A.C 360 ° conductio n angle (F=50Hz) Parameter Value 60 4 3 Unit °C/W °C/W °C/W GATE CHARACTER ISTICS (maximum values) PG (AV)= 1 W PG M = 10 W (tp = 20 µs) ELECTRICAL CHARA CTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3..





Part

T0605DH

Description

(T0605xH / T0609xH) SENSITIVE GATE TRIACS



Feature


www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS ) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T0 6xxxH series of triacs uses a high perf ormance MESA GLASS technology. These pa rts are intended for general purpose ap plications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS).
Manufacture

STMicroelectronics

Datasheet
Download T0605DH Datasheet




 T0605DH
www.DataSheet4U.com
T0605xH
® T0609xH
SENSITIVE GATE TRIACS
FEATURES
IT(RMS) = 6A
VDRM = 400V to 800V
IGT 5mA to 10mA
A1
A2
G
DESCRIPTION
The T06xxxH series of triacs uses a high
performance MESA GLASS technology. These
parts are intended for general purpose
applications where gate high sensitivity is
required.
ABSOLUTE RATINGS (limiting values)
TO220
non-insulated
(Plastic)
Symbol
IT(RM S)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
Tc= 100 °C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 50 mA diG /dt = 0.1 A/µs.
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
6
63
60
18
10
50
- 40, + 150
- 40, + 125
260
Unit
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
January 1995
Voltage
Unit
DM S N
400 600 700 800 V
1/5




 T0605DH
T0605xH / T0609xH
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III-IV MIN
tgt VD=VDRM IG = 40mA Tj= 25°C I-II-III-IV TYP
IT = 8.5A
dIG/dt = 0.5A/µs
IH * IT= 50mA Gate open
Tj= 25°C
MAX
IL IG= 1.2 IGT
Tj= 25°C I-III-IV TYP
II TYP
VTM * ITM= 8.5A tp= 380µs
Tj= 25°C
MAX
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 110°C
MAX
MAX
dV/dt *
VD=67%VDRM
Gate open
Tj= 110°C
MIN
TYP
(dV/dt)c * (dI/dt)c = 2.7 A/ms
Tj= 110°C
TYP
* For either polarity of electrode A2 voltage with reference to electrode A1
www.DataSheet4U.com
Value
60
4
3
Unit
°C/W
°C/W
°C/W
Sensitivity
05 09
5 10
1.5
0.2
2
Unit
mA
V
V
µs
5 10
5 10
10 20
1.65
5
2
20
10
12
mA
mA
V
µA
mA
V/µs
V/µs
ORDERING INFORMATION
T
TRIAC MESA GLASS
CURRENT
2/5
06 09 M
SENSITIVITY
®
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE




 T0605DH
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
www.DataSheet4U.com
T0605xH / T0609xH
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
10
180 O
= 180o
8
o
= 120
6 = 90o
= 60o
4 = 30 o
2
I T(RMS) (A)
0
0123456
P (W)
10
8
Tcase (oC)
Rth = 0 o C/W
2.5 o C/W
5o C/W
10 o C/W
-95
-100
6 -105
-110
4
-115
2
Tamb (oC)
-120
0 -125
0 20 40 60 80 100 120 140
Fig.3 : RMS on-state current versus case tempera-
ture.
I T(RMS)(A)
7
6
5
4
= 180o
3
2
1
Tcas e(oC )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1 Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
60
50
40
30
20
10
Number of cycles
0
1 10
Tj initial = 25oC
100 100 0
3/5
®




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