N-Channel E nhancement Mode Field Effect Transistor
Description
S T M4800A
S amHop Microelectronics C orp. Dec 30 2004 ver1.1
www.DataSheet4U.com
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m W ) Max
ID
8.2A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
18.5 @ V G S = 10V 33 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8...
