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PJ6680
25V N-Channel Enhancement Mode MOSFET
FEATURES
RDS(ON), VGS@10V,IDS@12A=10mΩ RDS(ON), VGS@4.5V,IDS@10A=18mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above c...
