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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
VDSS ID25
RDS(on)
= 150 V = 62 A ≤ 40 mΩ
TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C Maximum Ratings 150 150 ±20 ±30 62 150 50 30 1.0 10 350 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C
G D S D = Drain TAB = Drain (TAB) G D S (TAB) G S (TAB)
TO-220 (IXTP)
TO-3P (IXTQ)
300 °C 2600 °C 1.13/10 Nm/lb.in. 5.5 4 3 g g g
G = Gate S = Source
Features
l
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS.