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JDV2S29FS

Toshiba Semiconductor
Part Number JDV2S29FS
Manufacturer Toshiba Semiconductor
Description VCO
Published Apr 14, 2010
Detailed Description JDV2S29FS TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S29FS VCO for UHF Band Radio • • • High c...
Datasheet PDF File JDV2S29FS PDF File

JDV2S29FS
JDV2S29FS

Overview
JDV2S29FS TOSHIBA Diode Silicon Epitaxial Planar Type www.
DataSheet4U.
com JDV2S29FS VCO for UHF Band Radio • • • High capacitance ratio : C1V/C4V =2.
8 (typ.
) Low series resistance : rs = 0.
66 Ω (typ.
) This device is suitable for use in small tuners.
ｶｿｰﾄﾞﾏｰｸ Unit: mm 0.
6±0.
05 0.
1 0.
8±0.
05 A Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C 0.
07 M 0.
1 A 0.
2 ±0.
05 0.
1±0.
05 0.
48 +0.
02 -0.
03 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decr...


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