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Part Number IXTQ75N10P
Manufacturers IXYS
Logo IXYS
Description N-Channel MOSFET
Datasheet IXTQ75N10P DatasheetIXTQ75N10P Datasheet (PDF)

  IXTQ75N10P   IXTQ75N10P
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 mΩ TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤150° C, R G = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Maximum Ratings 100 V 100 V ±20 V ±30 V 75 A 200 A 50 A 30 mJ 1.0 J 10 V/ns 360 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 4 g 3 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 100 V .



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