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K1S2816BCM

Samsung semiconductor
Part Number K1S2816BCM
Manufacturer Samsung semiconductor
Description 8Mx16 bit Page Mode Uni-Transistor Random Access Memory
Published Apr 23, 2010
Detailed Description www.DataSheet4U.com K1S2816BCM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision ...
Datasheet PDF File K1S2816BCM PDF File

K1S2816BCM
K1S2816BCM

Overview
www.
DataSheet4U.
com K1S2816BCM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No.
History 0.
0 Initial Draft - Design Target Draft Date April 12, 2004 Remark Preliminary 0.
1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter as Min.
5ns - Added comment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at least one active operation after power up.
ISB1 is measured after 60ms from the time when standby mode is set up.
" - Changed ISB1 value(< 85°C) from 200µA into 250µA Finalize - Changed tOH from 5ns to 3n...


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