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PMWD18UN
M3D647
Dual N-channel µTrenchMOS™ ultra low level FET
Rev. 02 — 23 February 2004 Product data
1. Product profile
1.1 Description
Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Very low threshold s Low profile s Fast s...
