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AP1203GMA

Advanced Power Electronics
Part Number AP1203GMA
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Apr 30, 2010
Detailed Description www.DataSheet4U.com AP1203GMA Pb Free Plating Product Advanced Power Electronics Corp. ▼ SO-8 similar area footprint a...
Datasheet PDF File AP1203GMA PDF File

AP1203GMA
AP1203GMA

Overview
www.
DataSheet4U.
com AP1203GMA Pb Free Plating Product Advanced Power Electronics Corp.
▼ SO-8 similar area footprint and pin assignment ▼ Low Gate Charge ▼ Fast Switching Speed ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 47A D Description The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S SS G APAK-5 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 47 30 120 37 0.
29 4 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Value Max.
Max.
3.
4 85 Units ℃/W ℃/W Data and specifications subject to change without notice 200408053-1/4 www.
DataSheet4U.
com AP1203GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
30 1 - Typ.
0.
02 25 13 3.
3 8 8 65 20 5 240 165 1.
9 Max.
Units 12 25 3 1 250 ±100 20 2.
9 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.
5V, ID=15A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance 2 o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=20V VGS=4.
5V VDS=15V ID=20A RG=3.
3Ω,VGS=10V RD=0.
75Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz o Drain-Source Leak...


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