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Gain Amplife. AMMP-5620 Datasheet

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Gain Amplife. AMMP-5620 Datasheet






AMMP-5620 Amplife. Datasheet pdf. Equivalent




AMMP-5620 Amplife. Datasheet pdf. Equivalent





Part

AMMP-5620

Description

6 - 20 GHz High Gain Amplife



Feature


AMMP-5620 6 – 20 GHz High Gain Amplif ier in SMT Package www.DataSheet4U.com Data Sheet Description The AMMP-5620 MMIC is a GaAs wide-band amplifier in a surface mount package designed for me dium output power and high gain over th e 6-20 GHz frequency range. The 3 casca ded stages provide high gain while the single bias supply offers ease of use. It is fabricated usi.
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-5620 Datasheet


AVAGO TECHNOLOGIES AMMP-5620

AMMP-5620; ng a PHEMT integrated circuit process. T he RF input and output ports have match ing circuitry for use in 50-ohms enviro nments. The MMIC is a cost effective al ternative to hybrid (discrete FET) ampl ifiers that require complex tuning and assembly processes. Features • Surf ace Mount Package, 5.0 x 5.0 x 1.25 mm • Wide Frequency Range 6-20 GHz • High Gain: 17.5 dB Typi.


AVAGO TECHNOLOGIES AMMP-5620

cal • • • • Medium Output P1 dB: 14.8 dBm Typical Input and Output R eturn Loss: <-10 dB Typical 50 Ohm Inpu t and Output Match Single Supply Bias: 5V @ 95 mA Typical Pin Connections (To p View) Vd 0.1uF 3 100pF Applications • General purpose, wide band amplifi er in communication systems or microwav e instrumentation • High Gain Amplif ier 1 2 Attention: Observe .


AVAGO TECHNOLOGIES AMMP-5620

precautions for handling electrostatic s ensitive devices. RFout ESD Machine Mod el (= 40 V) ESD Human Body Model (= 150 V) Refer to Avago Application Note A00 4R: Electrostatic Discharge Damage and Control RFin 8 7 6 5 AMMP-5620 No te: Package base: GND  4 Table 1. A bsolute Maximum Ratings [1] Symbol Para meters and Test Conditions Unit Minimum Maximum www.Data.

Part

AMMP-5620

Description

6 - 20 GHz High Gain Amplife



Feature


AMMP-5620 6 – 20 GHz High Gain Amplif ier in SMT Package www.DataSheet4U.com Data Sheet Description The AMMP-5620 MMIC is a GaAs wide-band amplifier in a surface mount package designed for me dium output power and high gain over th e 6-20 GHz frequency range. The 3 casca ded stages provide high gain while the single bias supply offers ease of use. It is fabricated usi.
Manufacture

AVAGO TECHNOLOGIES

Datasheet
Download AMMP-5620 Datasheet




 AMMP-5620
AMMP-5620
6 – 20 GHz High Gain Amplifier in SMT Package
Data Sheet
www.DataSheet4U.com
Description
The AMMP-5620 MMIC is a GaAs wide-band amplifier in
a surface mount package designed for medium output
power and high gain over the 6-20 GHz frequency range.
The 3 cascaded stages provide high gain while the single
bias supply offers ease of use. It is fabricated using a
PHEMT integrated circuit process. The RF input and
output ports have matching circuitry for use in 50-ohms
environments. The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
Pin Connections (Top View)
Vd 0.1uF
Features
Surface Mount Package, 5.0 x 5.0 x 1.25 mm
Wide Frequency Range 6-20 GHz
High Gain: 17.5 dB Typical
Medium Output P1dB: 14.8 dBm Typical
Input and Output Return Loss: <-10 dB Typical
50 Ohm Input and Output Match
Single Supply Bias: 5V @ 95 mA Typical
Applications
Generalpurpose,widebandamplifierincommunication
systems or microwave instrumentation
High Gain Amplifier
123
100pF
RFin RFout
765
AMMP-5620
Note: Package base: GND
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (= 40 V)
ESD Human Body Model (= 150 V)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control





 AMMP-5620
Table 1. Absolute Maximum Ratings [1]
www.DataSheet4U.com
Symbol
Vdd
Idd
Pdc
Pin
Tch
Tstg
Tmax
Parameters and Test Conditions
Positive Drain Voltage
Total Drain Current
DC Power Dissipation
RF CW Input Power
Operating Channel Temperature
Storage Case Temperature
Maximum Assembly Temperature (20 sec max)
Unit Minimum Maximum
V-
7.5
mA -
135
W-
1.0
dBm -
20
°C -
+150
°C -65 +150
°C -
+260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
The absolute maximum ratings for Vdd, Idd, Pdc and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
Table 2. DC Specifications [1]
Symbol Parameters and Test Conditions
Unit Minimum Typical
Vdd Recommended Drain Supply Voltage V
-
5
Idd Total Drain Supply Current
qch-b Thermal Resistance [2]
mA 70
°C/W -
95
28
Notes:
1. Ambient operation temperature TA = 25°C unless otherwise noted.
2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
Maximum
-
130
-
Table 3. RF Specifications [2,3] (TA = 25°C, Freq = 18GHz, Vdd = 5V, Idd = 95mA)
Symbol
|S21|2
RLin
RLout
|S12|2
Parameters and Test Conditions
Small signal Gain [1,4]
Input Return Loss
Output Return Loss
Reverse Isolation
Unit Minimum Typical
Maximum
dB 15.5
17.5 19.5
dB -
11.5 -
dB -
11.6 -
dB -
-43.0 -
P1dB Output Power at 1dB Gain Compression dBm -
OIP3 Output 3rd Order Intercept Point
dBm -
NF Noise Figure [1,4]
dB -
14.8 -
22.5 -
5.1 7.0
Notes:
1. Typical value determined from a sample size of 500 parts from 2 wafers.
2. Small/large signal data measured in a fully de-embedded test fixture at TA = 25 degree Celsius.
3. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
4. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain.





 AMMP-5620
AMMP-5620 Typical Performance vs. Frequency (TA = 25°C, Vdd = 5V, Idd = 95mA, Zin = Zo = 50W) www.DataSheet4U.com
20
16
12
8
4
0
4 7 10 13 16 19 22
Frequency (GHz)
0
-10
-20
-30
-40
-50
-60
-70
4 7 10 13 16 19 22
Frequency (GHz)
0
-10
-20
-30
-40
4
7 10 13 16 19 22
Frequency (GHz)
Figure 1. Gain
Figure 2. Isolation
Figure 3. Input Return Loss
0
-5
-10
-15
-20
-25
-30
-35
4
7 10 13 16 19 22
Frequency (GHz)
8 20
7
6 16
5 12
4
38
2
4
1
0
4 7 10 13 16 19 22
Frequency (GHz)
0
4 7 10 13 16 19 22
Frequency (GHz)
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6. P1dB
20
18 GHz
15 13 GHz
10 7 GHz
120
115
110
5 105
0 100
-5
-10
-20 -15 -10
-5
0
Pin (dBm)
95
90
5 10
Figure 7. Pout and Idd vs. Pin
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.







Recommended third-party AMMP-5620 Datasheet






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