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IRF9Z24N. F9Z24N Datasheet

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IRF9Z24N. F9Z24N Datasheet






F9Z24N IRF9Z24N. Datasheet pdf. Equivalent




F9Z24N IRF9Z24N. Datasheet pdf. Equivalent





Part

F9Z24N

Description

IRF9Z24N

Manufacture

International Rectifier

Datasheet
Download F9Z24N Datasheet


International Rectifier F9Z24N

F9Z24N; PD -9.1484B www.DataSheet4U.com IRF9Z24 N VDSS = -55V RDS(on) = 0.175Ω HEXFE T® Power MOSFET Advanced Process Techn ology Dynamic dv/dt Rating l 175°C Ope rating Temperature l Fast Switching l P -Channel l Fully Avalanche Rated Descri ption l l D G ID = -12A S Fifth Gen eration HEXFETs from International Rect ifier utilize advanced processing techn iques to achieve extre.


International Rectifier F9Z24N

mely low on-resistance per silicon area. This benefit, combined with the fast s witching speed and ruggedized device de sign that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable dev ice for use in a wide variety of applic ations. The TO-220 package is universal ly preferred for all commercial-industr ial applications a.


International Rectifier F9Z24N

t power dissipation levels to approximat ely 50 watts. The low thermal resistanc e and low package cost of the TO-220 co ntribute to its wide acceptance through out the industry. TO-220AB Absolute M aximum Ratings Parameter ID @ TC = 25° C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous D rain Current, VGS @ -.



Part

F9Z24N

Description

IRF9Z24N

Manufacture

International Rectifier

Datasheet
Download F9Z24N Datasheet




 F9Z24N
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD -9.1484B
IRF9Z24Nwww.DataSheet4U.com
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 0.175
ID = -12A
S
TO-220AB
Max.
-12
-8.5
-48
45
0.30
± 20
96
-7.2
4.5
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
3.3
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/27/97





 F9Z24N
IRF9Z24N
www.DataSheet4U.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
-2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.05 –––
––– 0.175
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 19
––– 5.1
––– 10
13 –––
55 –––
23 –––
37 –––
4.5 –––
7.5 –––
350 –––
170 –––
92 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -7.2A „
VDS = VGS, ID = -250µA
VDS = -25V, ID = -7.2A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -7.2A
VDS = -44V
VGS = -10V, See Fig. 6 and 13 „
VDD = -28V
ID = -7.2A
RG = 24
RD = 3.7Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -12
––– ––– -48
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– -1.6
––– 47 71
––– 84 130
V TJ = 25°C, IS = -7.2A, VGS = 0V „
ns TJ = 25°C, IF = -7.2A
µC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.7mH
RG = 25, IAS = -7.2A. (See Figure 12)
ƒ ISD -7.2A, di/dt -280A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.





 F9Z24N
1 0 0 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
20µs PULS E W IDTH
TcJ = 2 5°C
IRF9Z24N
www.DataSheet4U.com
100
V GS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
-4.5 V
1A
0.1 1
10 100
-VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
-4.5V 20µs PULSE W IDTH
1
TCJ = 1 75°C
A
0.1 1 10 100
-VD S , Drain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics,
100
TJ = 2 5 °C
1 0 TJ = 1 7 5 °C
V DS = -2 5 V
20µs PULSE W IDTH
1A
4 5 6 7 8 9 10
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
2.0
ID = -12A
1.5
1.0
0.5
0.0
VGS = -10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature



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