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IRGB5B120KDPBF
INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. www.DataSheet4U.com Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-220 Package. Lea...
International Rectifier
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IRGB5B120KDPBF
INSULATED GATE BIPOLAR TRANSISTOR
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