DatasheetsPDF.com

P-Channel MOSFET. SSM9575M Datasheet

DatasheetsPDF.com

P-Channel MOSFET. SSM9575M Datasheet






SSM9575M MOSFET. Datasheet pdf. Equivalent




SSM9575M MOSFET. Datasheet pdf. Equivalent





Part

SSM9575M

Description

P-Channel MOSFET



Feature


SSM9575M/GM P-CHANNEL ENHANCEMENT-MODE P OWER MOSFET Simple drive requirement L ow on-resistance Fast switching charact eristics D D D D BV DSS R DS(ON) ID G -60V 90mΩ -4A SO-8 S S S Descr iption www.DataSheet4U.com Advanced Pow er D MOSFETs from Silicon Standard pr ovide the designer with the best combin ation of fast switching, ruggedized dev ice design, low on-r.
Manufacture

Silicon Standard

Datasheet
Download SSM9575M Datasheet


Silicon Standard SSM9575M

SSM9575M; esistance and cost-effectiveness. G S The SSM9575M is in the SO-8 package, wh ich is widely preferred for commercial and industrial surface mount applicatio ns, and is well suited for low voltage applications such as DC/DC converters. This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM. Absolute Maximum Rating s Symbol VDS VGS I.


Silicon Standard SSM9575M

D @ TA=25°C ID @ TA=100°C IDM PD @ TA= 25°C TSTG TJ Parameter Drain-Source Vo ltage Gate-Source Voltage Continuous Dr ain Current Continuous Drain Current Pu lsed Drain Current 1 3 3 Rating -60 ± 25 -4 -3.2 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C ° C Total Power Dissipation Linear Derat ing Factor Storage Temperature Range Op erating Junction Temperat.


Silicon Standard SSM9575M

ure Range Thermal Data Symbol Rthj-a Pa rameter Thermal Resistance Junction-amb ient 3 Value Max. 50 Unit °C/W 12/0 2/2004 Rev.2.01 www.SiliconStandard.co m 1 of 5 SSM9575M/GM Electrical Chara cteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain -Source Breakdown Voltage Test Conditio ns VGS=0V, ID=-250uA 2 Min. -60 -1 - Typ. -0.04 7 18 5 7.

Part

SSM9575M

Description

P-Channel MOSFET



Feature


SSM9575M/GM P-CHANNEL ENHANCEMENT-MODE P OWER MOSFET Simple drive requirement L ow on-resistance Fast switching charact eristics D D D D BV DSS R DS(ON) ID G -60V 90mΩ -4A SO-8 S S S Descr iption www.DataSheet4U.com Advanced Pow er D MOSFETs from Silicon Standard pr ovide the designer with the best combin ation of fast switching, ruggedized dev ice design, low on-r.
Manufacture

Silicon Standard

Datasheet
Download SSM9575M Datasheet




 SSM9575M
SSM9575M/GM
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching characteristics
Description
D
D
D
D
SO-8
G
S
S
S
www.DaAtadSvhaeentc4eUd.cPomower MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS
R DS(ON)
ID
G
-60V
90m
-4A
D
The SSM9575M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
S
This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
± 25
-4
-3.2
-20
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
50
Unit
°C/W
12/02/2004 Rev.2.01
www.SiliconStandard.com
1 of 5




 SSM9575M
SSM9575M/GM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BV DSS/ Tj
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
www.IDGSaStaSheet4U.comGate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=-4.5V, ID=-3A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4A
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V
VGS=±25V
ID=-4A
VDS=-48V
VGS=-4.5V
VDS=-30V
ID=-1A
RG=3.3, VGS=-10V
RD=30
VGS=0V
VDS=-25V
f=1.0MHz
-60 - - V
- -0.04 - V/°C
- - 90 m
- - 120 m
-1 - -3 V
-7-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 18 28 nC
- 5 - nC
- 7 - nC
- 12 - ns
- 5 - ns
- 68 - ns
32 - ns
- 1745 2790 pF
- 165 - pF
- 125 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-2A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 56 - ns
- 146 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
12/02/2004 Rev.2.01
www.SiliconStandard.com
2 of 5




 SSM9575M
55
50 T A = 25 o C
45
40
35
-10V
-7.0V
-5.0V
-4.5V
30
25
20
15
10
5 V G = -3.0 V
0
0 3 6 9 12 15
-V DS , Drain-to-Source Voltage (V)
www.DataSheet4U.com
Fig 1. Typical Output Characteristics
87.5
ID=-3A
T A =25°C
82.5
77.5
72.5
67.5
3 5 7 9 11
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
4
SSM9575M/GM
45
40 T A = 1 5 0 o C
35
30
-10V
-7.0V
-5.0V
-4.5V
25
20
15
10
V G = -3.0 V
5
0
0 3 6 9 12 15 18
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
1.8 I D = -4 A
V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
3
2
T j =150 o C
1
T j =25 o C
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
12/02/2004 Rev.2.01
www.SiliconStandard.com
3 of 5



Recommended third-party SSM9575M Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)