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N-Channel MOSFET. SSM95T06GP Datasheet

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N-Channel MOSFET. SSM95T06GP Datasheet






SSM95T06GP MOSFET. Datasheet pdf. Equivalent




SSM95T06GP MOSFET. Datasheet pdf. Equivalent





Part

SSM95T06GP

Description

N-Channel MOSFET



Feature


SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple dr ive requirement Fast switching G D BV DSS R DS(ON) ID 60V 8.5mΩ 75A S D escription The SSM95T06S is in a TO-263 package, which is widely used for comm ercial and industrial surface mount app lications, and is well suited for low v oltage applications such as DC/DC conve rters. The through-h.
Manufacture

Silicon Standard

Datasheet
Download SSM95T06GP Datasheet


Silicon Standard SSM95T06GP

SSM95T06GP; ole www.DataSheet4U.com version, the SSM 95T06P in TO-220, is available for low- footprint vertical mounting. These devi ces are manufactured with an advanced p rocess, providing improved on-resistanc e and switching performance. G G D S T O-263 (S) Pb-free lead finish (second- level interconnect) D TO-220(P) S Ab solute Maximum Ratings Symbol VDS VGS I D @ TC=25°C ID @ T.


Silicon Standard SSM95T06GP

C=100°C IDM PD @ TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rati ng 60 ±20 75 66 260 138 1.11 4 Units V V A A A W W/°C mJ A °C °C Total P ower Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanch e Current Storage Temper.


Silicon Standard SSM95T06GP

ature Range Operating Junction Temperatu re Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Para meter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max . Max. Value 0.9 62 Units °C/W °C/W 2/16/2005 Rev.1.10 www.SiliconStandard .com 1 of 5 SSM95T06GP,S Electrical C haracteristics @ T j=25oC (unless other wise specified) Symb.

Part

SSM95T06GP

Description

N-Channel MOSFET



Feature


SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple dr ive requirement Fast switching G D BV DSS R DS(ON) ID 60V 8.5mΩ 75A S D escription The SSM95T06S is in a TO-263 package, which is widely used for comm ercial and industrial surface mount app lications, and is well suited for low v oltage applications such as DC/DC conve rters. The through-h.
Manufacture

Silicon Standard

Datasheet
Download SSM95T06GP Datasheet




 SSM95T06GP
SSM95T06GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Description
D
G
S
The SSM95T06S is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
www.DatavSehreseiot4nU,.cthoemSSM95T06P in TO-220, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
BV DSS
R DS(ON)
ID
60V
8.5m
75A
G D S TO-263 (S)
Pb-free lead finish (second-level interconnect)
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
60
±20
75
66
260
138
1.11
450
30
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Max.
Max.
Value
0.9
62
Units
°C/W
°C/W
2/16/2005 Rev.1.10
www.SiliconStandard.com
1 of 5




 SSM95T06GP
SSM95T06GP,S
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
BV DSS/Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
wwwI.GDSaStaSheet4U.comGate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=45A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS= ±20V
ID=45A
VDS=48V
VGS=4.5V
VDS=30V
ID=45A
RG=3.3Ω , VGS=10V
RD=0.67
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt=100A/µs
60 -
-V
- 0.05 - V/°C
- - 8.5 m
- - 12 m
1 - 3V
- 72 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 72 115 nC
- 16 - nC
- 53 - nC
- 20 - ns
- 76 - ns
- 67 - ns
- 109 - ns
- 5700 9200 pF
- 900 - pF
- 560 - pF
- 1.1 1.7
Min. Typ. Max. Units
- - 1.3 V
- 40 - ns
- 60 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.The maximum current is limited by the package to 75A .
4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
2/16/2005 Rev.1.10
www.SiliconStandard.com
2 of 5




 SSM95T06GP
250
T C = 25 o C
200
150
100
10V
7.0 V
5.0V
4.5V
50
V G =3.0V
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
www.DataSheet4U.com
Fig 1. Typical Output Characteristics
11
I D =20A
10 T C =25 o C
9
8
SSM95T06GP,S
120
T C = 150 o C
80
10V
7.0 V
5.0V
4.5V
40
V G =3.0V
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =45A
V G =10V
1.2
0.8
7
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
50
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.0
40
30
T j =150 o C
20
10
T j =25 o C
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/16/2005 Rev.1.10
www.SiliconStandard.com
3 of 5



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