G18N120BN Datasheet PDF | Fairchild Semiconductor





(PDF) G18N120BN Datasheet PDF

Part Number G18N120BN
Description HGTG18N120BN
Manufacture Fairchild Semiconductor
Total Page 8 Pages
PDF Download Download G18N120BN Datasheet PDF

Features: HGTG18N120BN Data Sheet December 2001 5 4A, 1200V, NPT Series N-Channel IGBT Th e HGTG18N120BN is a Non-Punch Through ( NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best fe atures of MOSFETs and bipolar transisto rs. This device has the high input impe dance of a MOSFET and the low on-state conduction loss of a bipolar transistor . The IGBT is ideal for many high volta ge switching applications operating at moderate frequencies where low conducti on losses are essential, such as: AC an d DC motor controls, power supplies and drivers for solenoids, relays www.Data Sheet4U.com and contactors. Formerly De velopmental Type TA49288. Features • 54A, 1200V, TC = 25oC • 1200V Switch ing SOA Capability • Typical Fall Tim e . . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABE R™ Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E Ordering Info.

Keywords: G18N120BN, datasheet, pdf, Fairchild Semiconductor, , HGTG18N120BN, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

G18N120BN datasheet
Data Sheet
HGTG18N120BN
December 2001
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
wwwc.DoanttraoSlhs,epeot4wUe.cr osmupplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49288.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG18N120BN
TO-247
G18N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 54A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B

G18N120BN datasheet   G18N120BN datasheet   G18N120BN datasheet   G18N120BN datasheet   G18N120BN datasheet   G18N120BN datasheet   G18N120BN datasheet  
G18N120BN datasheet  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)