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PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 01 — 30 May 2006 Product data sheet
1. Product profile
1. 1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304ND.
1. 2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1. 3 Applications
I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driv...