PolarHT Power MOSFET
TM
IXTQ 74N20P IXTT 74N20P
VDSS ID25
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RDS(on)
= 200 V = 74 A = 34 mΩ
N-Channel Enhancement Mode Avalanche Energy Rated
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V
TO-3P (IXTQ)
G A A A mJ J V/ns
D
S
(TAB)
TO-268 (IXTT)
G
S D = Drain TAB = Drain
D (TAB)
W °C °C °C °C
G = Gate S = Source
Features
z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
1.13/10 Nm/lb.in. 5.5 5.0 g g
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Cond.