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PMR290XN
N-channel µTrenchMOS™ extremely low level FET
M3D173
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s L...
