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IXFH16N90

IXYS
Part Number IXFH16N90
Manufacturer IXYS
Description HiPerFET Power MOSFETs
Published Jul 5, 2010
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary...
Datasheet PDF File IXFH16N90 PDF File

IXFH16N90
IXFH16N90

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH16N90 IXFX16N90 VDSS = 900 V ID25 = 16 A RDS(on) = 0.
65 W trr £ 200 ns Maximum Ratings 900 900 ± 20 ± 30 16 64 16 45 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 300 1.
13/10 6 V V V V A A A mJ V/ns W °C °C °C °C Nm/l...


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