Part Number |
KU056N03Q |
Manufacturers |
KEC semiconductor |
Logo |
|
Description |
N-Ch Trench MOSFET |
Datasheet |
KU056N03Q Datasheet (PDF) |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.
D P
KU056N03Q
www.DataSheet4U.com
N-Ch Trench MOSFET
H T G L
FEATURES
VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max.) @ VGS=10V RDS(ON)=9.7m (Max.) @ VGS=4.5V
8 5 B1 B2 1 4 A
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25
Unless otherwise noted)
SYMBOL RATING VDSS VGSS (Note 1) ID IDP (Note 1) PD Tj Tstg (Note 1) RthJA 30 20 17 68 2.5 150 -55~150 50 /W UNIT V V A A W
DIM A B1 B2 D G H L P T
MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05
FLP-8
Maximum Junction Temperature Storage Temperature Range Thermal Resistance, J.