DatasheetsPDF.com



Part Number KU063N03Q
Manufacturers KEC semiconductor
Logo KEC semiconductor
Description N-channel MOSFET
Datasheet KU063N03Q DatasheetKU063N03Q Datasheet (PDF)

  KU063N03Q   KU063N03Q
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. FEATURES VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max.) @ VGS=10V RDS(ON)=10.7m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 Pulsed Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range (Note 1) (Note 1) VDSS VGSS ID IDP PD Tj Tstg 30 20 16 64 2.5 150 -55~150 V V A A W Thermal Resistance, Junction to Ambient (Note 1) RthJA 50 /W Note1) Surface Mounted on 1 1 FR4 Board, t 10sec. KU063N03Q N-Ch Trench MOSFET PIN CONNECTION (TOP VIEW) 2010. 6. 17 Revision No : 0 1/4 KU063N03Q ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHER.



KU056N03Q KU063N03Q KU068N03D


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)