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TPC8213-H

Toshiba Semiconductor
Part Number TPC8213-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 19, 2010
Detailed Description TPC8213-H com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TP...
Datasheet PDF File TPC8213-H PDF File

TPC8213-H
TPC8213-H


Overview
TPC8213-H com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.
9 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 40 mΩ (typ.
) High forward transfer admittance: |Yfs| =11 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source...



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