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SSM6K24FE

Toshiba Semiconductor
Part Number SSM6K24FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applicat...
Datasheet PDF File SSM6K24FE PDF File

SSM6K24FE
SSM6K24FE


Overview
SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.
5 V) Ron = 180mΩ (max) (@VGS = 2.
5 V) Unit: mm 1.
6±0.
05 1.
2±0.
05 0.
2±0.
05 1.
6±0.
05 1.
0±0.
05 0.
5 0.
5 Absolute Maximum Ratings (Ta = 25°C) 1 6 2 5 Characteristics Drain-Source voltage Symbol VDS Rating Unit 30 V 3 4 0.
12±0.
05 0.
55±0.
05 Gate-Source voltage VGSS ± 12 V Drain current DC ID Pulse IDP 0.
5 A 1.
5 Drain power dissipation Channel temperature PD 500 mW (Note 1) Tch 150 °C 1,2,5,6 :Drain 3 :Gate 4 :Source Storage temperature r...



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