SSM6L10TU
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TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L10TU
High Speed Switching Applications
Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm
2.1±0.1 1.7±0.1 0.65 0.65
Unit V V A
Q1 Absolute Maximum Rating...
