Preliminary www.DataSheet4U.com Datasheet
RJK0390DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1823-0130 Rev.1.30 May 12, 2010
Outline
RENESAS Package code: ...
