Silicon N Channel MOS FET High Speed Power Switching
Description
Preliminary www.DataSheet4U.com Datasheet
RJL5015DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010
Outline
RENESAS Package code: PRSS0004ZE-A (Packa...
