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B1340

2SB1340

Description

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM ...

ROHM Electronics

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