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KTC3571S

Part Number	KTC3571S
Manufacturer	KEC
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Published	Jul 30, 2010
Detailed Description	SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capabilit...
Datasheet	KTC3571S PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation** Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj 130 V 100 V 5V 1 A 3 300 mA 350 mW 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted on 99.
5% Alumina 10 8 0.
6mm.
MARKING Lot No.
KMBType Name KTC3571S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B...

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