N01L163WN1A Datasheet (data sheet) PDF





N01L163WN1A Datasheet - 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit

N01L163WN1A   N01L163WN1A  

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NanoAmp Solutions, Inc. 670 North McCart hy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www .nanoamp.com N01L163WN1A www.DataShee t4U.com 1Mb Ultra-Low Power Asynchrono us CMOS SRAM 64K × 16 bit Overview The N01L163WN1A is an integrated memory de vice containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is de

N01L163WN1A Datasheet - 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit

N01L163WN1A   N01L163WN1A  
signed and fabricated using NanoAmp’s advanced CMOS technology to provide bot h high-speed performance and ultra-low power. The device operates with a singl e chip enable (CE) control and output e nable (OE) to allow for easy memory exp ansion. Byte controls (UB and LB) allow the upper and lower bytes to be access ed independently. The N01L163WN1A is op timal for various applications








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