N02L163WN1A Datasheet (data sheet) PDF





N02L163WN1A Datasheet - 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit

N02L163WN1A   N02L163WN1A  

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NanoAmp Solutions, Inc. 1982 Zanker Road , San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L 163WN1A www.DataSheet4U.com 2Mb Ultra -Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory orga nized as 131,072 words by 16 bits. The device is designed and fabric

N02L163WN1A Datasheet - 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit

N02L163WN1A   N02L163WN1A  
ated using NanoAmp’s advanced CMOS tec hnology to provide both high-speed perf ormance and ultra-low power. The device operates with a single chip enable (CE ) control and output enable (OE) to all ow for easy memory expansion. Byte cont rols (UB and LB) allow the upper and lo wer bytes to be accessed independently. The N02L163WN1A is optimal for various applications where low-power








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