N04L1618C2A Datasheet (data sheet) PDF





N04L1618C2A Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

N04L1618C2A   N04L1618C2A  

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NanoAmp Solutions, Inc. 670 North McCart hy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www .nanoamp.com N04L1618C2A www.DataShee t4U.com 4Mb Ultra-Low Power Asynchrono us CMOS SRAM 256Kx16 bit Overview The N 04L1618C2A is an integrated memory devi ce containing a 4 Mbit Static Random Ac cess Memory organized as 262,144 words by 16 bits. The device is de

N04L1618C2A Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

N04L1618C2A   N04L1618C2A  
signed and fabricated using NanoAmp’s advanced CMOS technology to provide bot h high-speed performance and ultra-low power. The base design is the same as N anoAmp’s N04L163WC1A, which is proces sed to operate at higher voltages. The device operates with two chip enable (C E1 and CE2) controls and output enable (OE) to allow for easy memory expansion . Byte controls (UB and LB) allo








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