BRF4N60(CS4N60F)
: DC/DC 。
N-CHANNEL MOSFET/N MOS
com
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies. : ,,。
Features: Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol Rating Unit
VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG
600 4. 0 2. 5 16 ±30 240 10 4. 0 33 -55 to 150
V A A A V mJ mJ A W ℃
/Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS VDS=480V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2. 0A gFS VDS=40V ID=2. 0A VSD VGS=0V IS=4. 0A Ciss Coss VDS=25V VGS...