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TGS4304

TriQuint Semiconductor
Part Number TGS4304
Manufacturer TriQuint Semiconductor
Description High Power Ka-Band Absorptive SPDT Switch
Published Nov 2, 2010
Detailed Description Advance Product Information September 26, 2005 High Power Ka-Band Absorptive SPDT Switch • • • • • • • • TGS4304 Key ...
Datasheet PDF File TGS4304 PDF File

TGS4304
TGS4304

Overview
Advance Product Information September 26, 2005 High Power Ka-Band Absorptive SPDT Switch • • • • • • • • TGS4304 Key Features and Performance 32 - 40 GHz Frequency Range > 33 dBm Input P1dB @ VC = +10V On Chip Biasing Resistors On Chip DC Blocks < 1.
0 dB Midband Insertion Loss < 4ns Switching Speed VPIN Technology Chip Dimensions: 1.
58 x 1.
10 x 0.
10 mm (0.
043 x 0.
062 x 0.
004 inches) Description The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw (SPDT) PIN monolithic switch designed to operate over the Ka-Band frequency range.
This switch maintains a low insertion loss with high power handling of 33dBm or greater input P1dB at VC = +10V.
These advantages, along with the small size of the chip, make the TGS4304 ideal for use in communication and transmit/receive applications.
S21 (dB) Primary Applications • • • Ka-Band Transmit / Receive Point-to-Point Radio Point-to-Multipoint Radio Measured Data VA = +5V, IA ≈ 0mA, VB = -4V, IB = 30mA 0.
0 -0.
5 -1.
0 -1.
5 -2.
0 -2.
5 -3.
0 -3.
5 -4.
0 -4.
5 -5.
0 32 33 34 35 36 37 Frequency (GHz) 38 39 40 S21 S11 S22 20 15 10 0 -5 -10 -15 -20 -25 -30 S11,S22 (dB) 5 The TGS4304 is 100% DC & RF tested on-wafer to ensure performance compliance.
Lead free and RoHS compliant.
Note: This device is early in the characterization process prior to finalizing all electrical test specifications.
Specifications are subject to change without notice.
1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.
com Web: www.
triquint.
com www.
DataSheet.
in Advance Product Information September 26, 2005 TGS4304 TABLE I MAXIMUM RATINGS Symbol VC IC PIN TM TSTG 1/ 2/ 3/ Parameter 1/ Control Voltage Control Current Input Continuous Wave Power Mounting Temperature (30 Seconds) Storage Temperature Value -5V to +25V 34 mA 38 dBm 320 C -65 to 150 C 0 0 Notes 2/ 2/ These ratings represent the maximum operable values for this device.
VC and IC are per bias pad.
Operation above 30dBm requires control voltages ab...


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