Preliminary Datasheet
RJK0211DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1949-0021 Rev.0.21 Jul 02, 2010
Outline
RENESAS Package code: PWSN0008DC-A (P...
