Op Amp. LMH6628EP Datasheet

LMH6628EP Amp. Datasheet pdf. Equivalent

LMH6628EP Datasheet
Recommendation LMH6628EP Datasheet
Part LMH6628EP
Description Voltage Feedback Op Amp
Feature LMH6628EP; LMH6628EP Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp OBSOLETE LMH6628EP O.
Manufacture National Semiconductor
Datasheet
Download LMH6628EP Datasheet




National Semiconductor LMH6628EP
LMH6628EP
OBSOLETE
October 15, 2010
Enhanced Plastic Dual Wideband, Low Noise, Voltage
Feedback Op Amp
General Description
The National LMH6628EP is a high speed dual op amp that
offers a traditional voltage feedback topology featuring unity
gain stability and slew enhanced circuitry. The LMH6628EP's
low noise and very low harmonic distortion combine to form
a wide dynamic range op amp that operates from a single (5V
to 12V) or dual (±5V) power supply.
Each of the LMH6628EP's closely matched channels pro-
vides a 300MHz unity gain bandwidth and low input voltage
noise density (2nV/ ). Low 2nd/3rd harmonic distortion
(−65/−74dBc at 10MHz) make the LMH6628EP a perfect
wide dynamic range amplifier for matched I/Q channels.
With its fast and accurate settling (12ns to 0.1%), the
LMH6628EP is also an excellent choice for wide dynamic
range, anti-aliasing filters to buffer the inputs of hi resolution
analog-to-digital converters. Combining the LMH6628EP's
two tightly matched amplifiers in a single 8-pin SOIC package
reduces cost and board space for many composite amplifier
applications such as active filters, differential line drivers/re-
ceivers, fast peak detectors and instrumentation amplifiers.
The LMH6628EP is fabricated using National’s VIP10com-
plimentary bipolar process.
To reduce design times and assist in board layout, the
LMH6628EP is supported by an evaluation board
(CLC730036).
ENHANCED PLASTIC
• Extended Temperature Performance of −40°C to +85°C
• Baseline Control - Single Fab & Assembly Site
• Process Change Notification (PCN)
• Qualification & Reliability Data
• Solder (PbSn) Lead Finish is standard
• Enhanced Diminishing Manufacturing Sources (DMS)
Support
Features
Wide unity gain bandwidth: 300MHz
Low noise: 2nV/
Low Distortion: −65/−74dBc (10MHz)
Settling time: 12ns to 0.1%
Wide supply voltage range: ±2.5V to ±6V
High output current: ±85mA
Improved replacement for CLC428
Applications
High speed dual op amp
Low noise integrators
Selected Military Applications
Selected Avionics Applications
Ordering Information
Part Number
LMH6628MAEP
(Note 1, Note 2)
VID Part Number
V62/04624-01
TBD
NS Package Number (Note 3)
M08A
TBD
Note 1: For the following (Enhanced Plastic) version, check for availability: LMH6628MAXEP. Parts listed with an "X" are provided in Tape & Reel
and parts without an "X" are in Rails.
Note 2: FOR ADDITIONAL ORDERING AND PRODUCT INFORMATION, PLEASE VISIT THE ENHANCED PLASTIC WEB SITE AT: www.national.com/
mil
Note 3: Refer to package details under Physical Dimensions
VIP10is a trademark of National Semiconductor Corporation.
© 2010 National Semiconductor Corporation 200886
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200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20
www.national.com



National Semiconductor LMH6628EP
Connection Diagram
8-Pin SOIC
Top View
20088635
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200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20



National Semiconductor LMH6628EP
Absolute Maximum Ratings (Note 4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 7)
Human Body Model
Machine Model
Supply Voltage
Short Circuit Current
Common-Mode Input Voltage
Differential Input Voltage
2kV
200V
13.5
(Note 6)
V+ - V
V+ - V
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering 10 sec)
+150°C
−65°C to +150°C
+300°C
Operating Ratings (Note 4)
Thermal Resistance (Note 8)
Package
SOIC
(θJC)
65°C/W
Temperature Range
Nominal Supply Voltage
(θJA)
145°C/W
−40°C to +85°C
±2.5V to ±6V
Electrical Characteristics (Note 5)
VCC = ±5V, AV = +2V/V, RF = 100Ω, RG = 100Ω, RL = 100Ω; unless otherwise specified. Boldface limits apply at the
temperature extremes.
Symbol
Parameter
Conditions
Min Typ Max
Frequency Domain Response
GB
SSBW
SSBW
GFL
GFP
Gain Bandwidth Product
-3dB Bandwidth, AV = +1
-3dB Bandwidth, AV = +2
Gain Flatness
Peaking
VO < 0.5VPP
VO < 0.5VPP
VO < 0.5VPP
VO< 0.5VPP
DC to 200MHz
200
180 300
100
0.0
GFR
Rolloff
DC to 20MHz
.1
LPD Linear Phase Deviation
DC to 20MHz
.1
Time Domain Response
TR Rise and Fall Time
1V Step
4
TS Settling Time
2V Step to 0.1%
12
OS Overshoot
1V Step
1
SR Slew Rate
4V Step
300 550
Distortion And Noise Response
HD2
HD3
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Input Noise
1VPP, 10MHz
1VPP, 10MHz
−65
−74
VN Voltage
1MHz to 100MHz
2
IN Current
1MHz to 100MHz
2
XTLKA
Crosstalk
Input Referred, 10MHz
−62
Static, DC Performance
GOL Open-Loop Gain
56 63
53
VIO Input Offset Voltage
±.5 ±2
±2.6
DVIO
IBN
Average Drift
Input Bias Current
5
±.7 ±20
±30
DIBN
IOS
IOSD
PSRR
Average Drift
Input Offset Current
Average Drift
Power Supply Rejection Ratio
150
0.3 ±6
5
60 70
46
CMRR
Common-Mode Rejection Ratio
57 62
54
Units
MHz
MHz
MHz
dB
dB
deg
ns
ns
%
V/µs
dBc
dBc
nV/
pA/
dB
dB
mV
µV/°C
µA
nA/°C
µA
nA/°C
dB
dB
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200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20
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