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WFF9N50
Silicon N-Channel MOSFET
Features
� � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology ha...
