NTMS4800N Power MOSFET
Features
30 V, 8 A, N−Channel, SOIC−8
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS 30 V RDS(ON) MAX 20 mW @ 10 V 27 m...
