NTP13N10
Preferred Device
Power MOSFET
13 A, 100 V, N−Channel Enhancement−Mode TO−220
Features
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available
VDSS 100 V
http://onsemi.com
RDS(ON) TYP 165 mΩ @ 10 V N−Channel D...