9520N Data Sheet PDF | International Rectifier





(Datasheet) 9520N PDF Download

Part Number 9520N
Description IRF9520N
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download 9520N Datasheet PDF

Features: PD - 91521A IRF9520N HEXFET® Power MOS FET l l l l l l Advanced Process Techn ology Dynamic dv/dt Rating 175°C Opera ting Temperature Fast Switching P-Chann el Fully Avalanche Rated D VDSS = -10 0V G S RDS(on) = 0.48Ω ID = -6.8A D escription Fifth Generation HEXFETs fro m International Rectifier utilize advan ced processing techniques to achieve ex tremely low on-resistance per silicon a rea. This benefit, combined with the fa st switching speed and ruggedized devic e design that HEXFET Power MOSFETs are well known for, provides the designer w ith an extremely efficient and reliable device for use in a wide variety of ap plications. The TO-220 package is unive rsally preferred for all commercial-ind ustrial applications at power dissipati on levels to approximately 50 watts. Th e low thermal resistance and low packag e cost of the TO-220 contribute to its wide acceptance throughout the industry . TO-220AB Absolute Maximum Ratings P arameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS I.

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9520N datasheet
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
www.DataSheet4U.com
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 91521A
IRF9520N
HEXFET® Power MOSFET
D
VDSS = -100V
RDS(on) = 0.48
S ID = -6.8A
TO-220AB
Max.
-6.8
-4.8
-27
48
0.32
± 20
140
-4.0
4.8
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
3.1
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98

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