N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED93A3/CEU93A3
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED ...
