(PDF) L-51P3C Datasheet PDF | ETC





L-51P3C Datasheet PDF

Part Number L-51P3C
Description Made with NPN silicon phototransistor chips
Manufacture ETC
Total Page 2 Pages
PDF Download Download L-51P3C Datasheet PDF

Features: Datasheet pdf PHOTOTRANSISTOR L-51P3C Features !MECHA NICALLY AND SPECTRALLY MATCHED TO Desc ription Made with NPN silicon phototran sistor chips. THE L-53 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dim ensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless othe rwise noted. 3. Lead spacing is measure d where the lead emerge package. 4. Spe cifications are subject to change witho ut notice. SPEC NO: KDA0531 APPROVED:J .LU REV NO: V.1 CHECKED: DATE: SEP/17 /2001 DRAWN:X.Q.ZHENG PAGE: 1 OF 2 Ab solute Maximum Rating at T)=25°C Par a m et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating T emperature Range Storage Temperature Ra nge Lead Soldering Temperature(4mm For 5sec) Max im u m Rat in g s 30V 5V 100m W -40°C ~ +85°C -40°C ~ +85°C 260° C Electrical And Radiant Characteristi cs at T)=25°C Sy m b o l V BR C EO V BR EC O VCE (SAT) ICEO TR TF Par a.

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L-51P3C datasheet
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO
THE L-53 SERIES INFRARED EMITTING LED LAMP.
!WATER CLEAR LENS.
PHOTOTRANSISTOR
L-51P3C
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: KDA0531
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 1 OF 2

L-51P3C datasheet
Absolute Maximum Rating at T)=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature(4mm For 5sec)
Maximum Ratings
30V
5V
100mW
-40°C ~ +85°C
-40°C ~ +85°C
260°C
Electrical And Radiant Characteristics at T)=25°C
Symbol
Parameter
Min.
VBR CEO
Collector-to-Emitter Breakdown Voltage
VBR ECO
Emitter-to-Collector Breakdown Voltage
VCE (SAT) Collector-to-Emitter Saturation Voltage
ICEO Collector Dark Current
TR Rise Time (10% to 90%)
TF Fall Time (90% to 10%)
30
5
-
-
-
-
Typ.
-
-
-
-
3
3
Max.
-
-
0.8
100
-
-
Unit
V
V
V
nA
us
us
Test Condiction
I C=100uA
Ee=0mW/cm2
I E=100uA
Ee=0mW/cm2
I C=2mA
Ee=20mW/cm2
VCE=10V
Ee=0mW/cm2
VCE=5V
IC=1mA
RL=1K
I (ON) On State Collector Current
VCE=5V,
0.1 0.5
-
mA
Ee=1mW/cm2,
λ=940nm
SPEC NO: KDA0531
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 2 OF 2




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