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LP2301LT1G

20V P-Channel Enhancement-Mode MOSFET

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 LP2301LT1G Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 SOT– 23 (TO–2...

Leshan Radio Company

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LP2301LT1G 20V P-Channel Enhancement-Mode MOSFET - Leshan Radio Company

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