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IRG7PH35UD1PbF
INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 97455 INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tes...
International Rectifier
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IRG7PH35UD1PbF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
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