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IXFB170N30P

IXYS Corporation
Part Number IXFB170N30P
Manufacturer IXYS Corporation
Description Polar Power MOSFET HiPerFET
Published May 30, 2011
Detailed Description Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet PDF File IXFB170N30P PDF File

IXFB170N30P
IXFB170N30P

Overview
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS ID25 RDS(on) trr = = ≤ ≤ 300V 170A 18mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ±20 ±30 170 75 500 85 5 20 1250 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 30.
.
12...


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