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IXFH110N15T2

IXYS Corporation
Part Number IXFH110N15T2
Manufacturer IXYS Corporation
Description TrenchT2 HiperFET Power MOSFET
Published May 30, 2011
Detailed Description Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH110N...
Datasheet PDF File IXFH110N15T2 PDF File

IXFH110N15T2
IXFH110N15T2

Overview
Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH110N15T2 VDSS ID25 RDS(on) = 150V = 110A ≤ 13mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 110 300 55 800 15 480 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A mJ V/ns W °C °C °C °C °C g Features z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.
6mm (0.
062in.
) from case for 10s P...


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